STM32W108CB datasheet(250/278 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32W108HB STM32W108CC STM32W108CB STM32W108CZ

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Doc ID 16252 Rev 14

Table 58 describes the key ADC parameters measured at 25°C and VDD_PADS at 3.0 V, for

a sampling rate of 6 MHz. HVSELP and HVSELN are programmed to 1 to enable the input

buffer. The single-ended measurements were done at finput = 7.7% fNyquist, level = 1.2 V p-p

swing centered on 1.5 V. The differential measurements were done at finput = 7.7% fNyquist,

level = 1.2 V p-p swing and a comon mode voltage of 1.5 V.

SMP[2:0]

Conversion Time (µs)

Nyquist Freq (kHz)

3 dB Cut-off (kHz)

INL (codes peak)

INL (codes RMS)

DNL (codes peak)

DNL (codes RMS)

ENOB (from single-

cycle test)

SNR (dB)

Single-Ended

Differential

SINAD (dB)

Single-Ended

Differential

SDFR (dB)

Single-Ended

Differential

THD (dB)

Single-Ended

Differential

ENOB (from SNR)

Single-Ended

Differential

ENOB (from SINAD)

Single-Ended

Differential

Equivalent ADC Bits

Table 58.

ADC module key parameters for input buffer enabled

and 6MHz sampling(1)

INL and DNL are referenced to a LSB of the Equivalent ADC Bits shown in the last row of Table 58. ENOB

(effective number of bits) can be calculated from either SNR (signal to non-harmonic noise ratio) or SINAD

(signal-to-noise and distortion ratio).

Parameter

Performance

128

256

512

1024

2048

4096

93.8

46.9

23.4

11.7

5.86

2.93

1.47

0.732

56.6

28.3

14.1

7.07

3.54

1.77k

0.884

0.442

0.055

0.032

0.038

0.07

0.123

0.261

0.522

1.028

0.028

0.017

0.02

0.04

0.077

0.167

0.326

0.65

0.028

0.017

0.02

0.04

0.077

0.167

0.326

0.65

0.01

0.006

0.007

0.008

0.013

0.023

0.038

3.6

5.0

6.6

8.1

9.5

10.7

11.3

11.6

-33

-42

-51

-59

-60

-66

-69

-68

-76

-68

-80

-68

-82

3.6

5.1

6.6

8.1

9.5

10.5

10.7

10.9

11.3

11.5

3.6

5.0

5.1

6.5

6.6

8.0

9.4

9.5

10.3

10.6

10.7

11.3

10.7

11.4

7 [15:9]

8 [15:8]

9 [15:7]

[15:6]

[15:5]

[15:4]

[15:3]

[15:2]

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