AP20P02S datasheet(2/6 Pages) A-POWER

2 / 6 page

AP20P02S/P

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-20

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=-1mA

-0.03

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-8A

mΩ

VGS=-2.5V, ID=-5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-0.5

gfs

Forward Transconductance

VDS=-10V, ID=-8A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-20V, VGS=0V

-1

Drain-Source Leakage Current (Tj=150

oC)

VDS=-16V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS= ± 12

Total Gate Charge

ID=-8A

13.5

Qgs

Gate-Source Charge

VDS=-16V

2.1

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

1.6

td(on)

Turn-on Delay Time

VDS=-10V

Rise Time

ID=-8A

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-4.5V

Fall Time

RD=1.25Ω

-27

Ciss

Input Capacitance

VGS=0V

1050

Coss

Output Capacitance

VDS=-16V

410

Crss

Reverse Transfer Capacitance

f=1.0MHz

110

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-10

ISM

Pulsed Source Current ( Body Diode )

-50

VSD

Forward On Voltage

Tj=25℃, IS=-10A, VGS=0V

-1.2

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

±100

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