AP02N90P datasheet(2/4 Pages) A-POWER

2 / 4 page

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=1mA

900

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.8

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=0.85A

7.2

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=1.9A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=900V, VGS=0V

Drain-Source Leakage Current (Tj=125

oC)

VDS=720V, VGS=0V

100

IGSS

Gate-Source Leakage

VGS=±30V

±100

Total Gate Charge

ID=1.9A

Qgs

Gate-Source Charge

VDS=540V

2.5

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

4.7

td(on)

Turn-on Delay Time

VDD=450V

Rise Time

ID=1.9A

td(off)

Turn-off Delay Time

RG=10Ω,VGS=10V

Fall Time

RD=236Ω

-9

Ciss

Input Capacitance

VGS=0V

630

1000

Coss

Output Capacitance

VDS=25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=1.9A, VGS=0V

1.3

trr

Reverse Recovery Time

IS=1.9A, VGS=0V,

360

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

1.8

µC

Notes:

1.Pulse width limited by safe operating area.

2.Starting Tj=25

oC , V

DD=50V , L=10mH , RG=25Ω , IAS=1.9A.

3.Pulse width <300us , duty cycle <2%.

2/4

AP02N90P

AP02N90P bảng dữ liệu(PDF) 2 Page - Advanced Power Electronics Corp.

AP02N90P bảng dữ liệu(HTML) 2 Page - Advanced Power Electronics Corp.

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL