AP02N60P datasheet(2/4 Pages) A-POWER

2 / 4 page

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

600

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.6

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=1A

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=1A

0.2

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=600V, VGS=0V

Drain-Source Leakage Current (Tj=150

oC)

VDS=480V, VGS=0V

100

IGSS

Gate-Source Leakage

VGS=±30V

±100

Total Gate Charge

ID=2A

Qgs

Gate-Source Charge

VDS=480V

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

8.5

td(on)

Turn-on Delay Time

VDD=300V

9.5

Rise Time

ID=2A

td(off)

Turn-off Delay Time

RG=10Ω,VGS=10V

Fall Time

RD=150Ω

-9

Ciss

Input Capacitance

VGS=0V

155

240

Coss

Output Capacitance

VDS=25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.5V

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25℃, IS=2A, VGS=0V

1.5

Notes:

1.Pulse width limited by safe operating area.

2.Starting Tj=25

oC , V

DD=50V , L=50mH , RG=25Ω , IAS=1.6A.

3.Pulse width <300us , duty cycle <2%.

AP02N60P

2/4

AP02N60P bảng dữ liệu(PDF) 2 Page - Advanced Power Electronics Corp.

AP02N60P bảng dữ liệu(HTML) 2 Page - Advanced Power Electronics Corp.

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL