Electrical characteristics

STFILED625H, STPLED625H, STULED625H

4/17

DocID024475 Rev 1

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC=125 °C

1

50

µA

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V; VDS=0

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.6

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 1.9 A

1.7

2

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

560

43

7.5

pF

pF

pF

Coss eq.

(1)

1.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

related

VDS = 0 to 496 V, VGS = 0

27

pF

Rg

Gate input resistance

f=1 MHz open drain

2

5

10

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 3.8 A,

VGS = 10 V

(see Figure 18)

-

23

4

13

nC

nC

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 1.9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

10

9

29

19

-

ns

ns

ns

ns

Obsolete

Product(s)

- Obsolete

Product(s)