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K4X51163PC bảng dữ liệu(PDF) 13 Page - Samsung semiconductor

tên linh kiện K4X51163PC
Giải thích chi tiết về linh kiện  32M x16 Mobile-DDR SDRAM
PDF  23 Pages
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nhà sản xuất  SAMSUNG [Samsung semiconductor]
Trang chủ  http://www.samsung.com/Products/Semiconductor
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K4X51163PC - L(F)E/G
February 2006
Mobile-DDR SDRAM
AC Timming Parameters & Specifications
Parameter
Symbol
DDR266
DDR222
Unit
Note
Min
Max
Min
Max
Clock cycle time
CL=2
tCK
12.0
15.0
ns
CL=3
7.5
9.0
Row cycle time
tRC
67.5
81
ns
Row active time
tRAS
45
70,000
54
70,000
ns
RAS to CAS delay
tRCD
22.5
27
ns
Row precharge time
tRP
22.5
27
ns
Row active to Row active delay
tRRD
15
15
ns
Write recovery time
tWR
15
15
ns
Last data in to Active delay
tDAL
2tCK+tRP
2tCK+tRP
-
2
Last data in to Read command
tCDLR
1
1
tCK
Col. address to Col. address delay
tCCD
1
1
tCK
Clock high level width
tCH
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
tCK
DQ Output data access time from CK/
CK
CL=2
tAC
2
8
2.5
8
ns
3
CL=3
2
6
2.5
6
DQS Output data access time from
CK/CK
CL=2
tDQSCK
2
8
2.5
8
ns
CL=3
2
6
2.5
6
Data strobe edge to ouput data edge
tDQSQ
0.6
0.7
ns
Read Preamble
CL=2
tRPRE
0.5
1.1
0.5
1.1
tCK
CL=3
0.9
1.1
0.9
1.1
Read Postamble
tRPST
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
ns
4
DQS-in hold time
tWPREH
0.25
0.25
tCK
DQS-in high level width
tDQSH
0.4
0.6
0.4
0.6
tCK
DQS-in low level width
tDQSL
0.4
0.6
0.4
0.6
tCK
DQS falling edge to CK setup time
tDSS
0.2
0.2
tCK
DQS falling edge hold time from CK
tDSH
0.2
0.2
tCK
DQS-in cycle time
tDSC
0.9
1.1
0.9
1.1
tCK
Address and Control Input setup time
tIS
1.3
1.5
ns
1
Address and Control Input hold time
tIH
1.3
1.5
ns
1
Address & Control input pulse width
tIPW
2.6
3.0
1
DQ & DM setup time to DQS
tDS
0.8
1.1
ns
5,6
DQ & DM hold time to DQS
tDH
0.8
1.1
ns
5,6
DQ & DM input pulse width
tDIPW
1.8
2.4
ns
DQ & DQS low-impedence time from CK/CK
tLZ
1.0
1.0
ns
DQ & DQS high-impedence time from CK/CK
tHZ
6.0
7.0
ns
DQS write postamble time
tWPST
0.4
0.6
0.4
0.6
tCK
DQS write preamble time
tWPRE
0.25
0.25
tCK



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