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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

25

A

Drain current (continuous) at TC = 100 °C

16

A

IDM(1)

Drain current (pulsed)

80

A

PTOT

Total power dissipation at TC = 25 °C

190

W

dv/dt(2)

Peak diode recovery voltage slope

100

V/ns

di/dt (2)

Peak diode recovery current slope

1000

A/µs

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 25 A, VDS(peak) < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.66

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

30

°C/W

1. When mounted on FR-4 board of 1 inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

4

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

360

mJ

STB33N60DM6

Electrical ratings

DS12904 - Rev 2

page 2/14