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Rev.3

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Page 2

Nov, 2022

CTS314

1.0A MOSFET/IGBT Gate Driver Optocoupler

Absolute Maximum Ratings T

A = 25°C, unless otherwise specified

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the operational sections of this document. In addition, extended exposure to stresses above

the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol

Parameters

Ratings

Units

Notes

VISO

Isolation voltage (AC, 1 minute, 40 ~ 60% R.H.)

5000

VRMS

1

TOPR

Operating temperature

-40 ~ +100

0C

TSTG

Storage temperature

-55 ~ +125

0C

TSOL

Soldering temperature

(For 10 seconds)

260

0C

2

PT

Total Power Dissipation

300

mW

Emitter

IF

Forward current

25

mA

IFP

Peak forward current (50% duty, 1ms P.W)

1

A

VR

Reverse voltage

5

V

Detector

PO

Output Power dissipation

250

mW

VO(PEAK)

Peak Output Voltage

35

V

3

IOPH

Output High Peak Current

1

A

4

IOPL

Output Low Peak Current

1

A

4

VCC

Supply voltage

35

V

Notes

1.

AC for 1 minute, RH = 40 ~ 60%.

2.

For 10 second peak

3.

The

VO(PEAK) voltage CAN NOT BE high than VCC.

4.

The IO maximum pulse width = 10 us, maximum duty cycle = 0.2%.