GDZ8V2BLP3

Document number: DS35772 Rev. 1 - 2

2 of 4

www.diodes.com

February 2012

© Diodes Incorporated

GDZ8V2BLP3

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

TA = 25°C

PD

250

mW

Thermal Resistance, Junction to Ambient Air (Note 5) TA = 25°C

RθJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Type

Number

Marking

Code

Zener Voltage Range

(Note 6)

Maximum

Reverse

Current

(Note 6)

VZ @ IZT

IZT

IR

@ VR

Nom (V)

Min (V)

Max (V)

mA

μA

V

GDZ8V2BLP3

KI, KR

8.2

7.995

8.405

5

0.5

5.0

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

0.05

0.10

0.15

0.20

0.25

0.30

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

A

Note 5

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.1

1

10

100

1,000

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

F

0.001

0.01

0.1

1

10

7.0

7.5

8.0

8.5

9.0

9.5

10

V , ZENER VOLTAGE (V)

Fig. 3 Typical Zener Breakdown Characteristics

Z

0

5

10

15

20

01

2

3

4

5

V , REVERSE VOLTAGE (V)

R

Fig. 4 Typical Total Capacitance

f = 1MHz