DMHC4035LSDQ

Document number: DS37219 Rev. 2 - 2

3 of 9

www.diodes.com

March 2018

© Diodes Incorporated

DMHC4035LSDQ

Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

μA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

26

45

m

Ω

VGS = 10V, ID = 3.9A

—

35

58

VGS = 4.5V, ID = 3.5A

Diode Forward Voltage

VSD

—

0.7

1

V

VGS = 0V, IS = 1.25A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

574

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

87.8

—

Reverse Transfer Capacitance

Crss

—

38.7

—

Gate Resistance

Rg

—

1.6

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

5.9

—

nC

VDS = 20V, ID = 3.9A

Total Gate Charge (VGS = 10V)

Qg

—

12.5

—

Gate-Source Charge

Qgs

—

1.7

—

Gate-Drain Charge

Qgd

—

2.2

—

Turn-On Delay Time

tD(ON)

—

3.1

—

ns

VDD = 20V, VGS = 10V,

RL = 20Ω, RG = 6Ω

Turn-On Rise Time

tR

—

2.6

—

Turn-Off Delay Time

tD(OFF)

—

15

—

Turn-Off Fall Time

tF

—

5.5

—

Reverse Recovery Time

tRR

—

6.5

—

ns

IF = 3.9A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

1.2

—

nC

Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-40

—

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

μA

VDS = -40V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-1

—

-3

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

49

65

m

Ω

VGS = -10V, ID = -4.2A

—

73

100

VGS = -4.5V, ID = -3.3A

Diode Forward Voltage

VSD

—

-0.7

-1.2

V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

587

—

pF

VDS = -20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

88.1

—

pF

Reverse Transfer Capacitance

Crss

—

40.2

—

pF

Gate Resistance

Rg

—

12.3

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg

—

5.4

—

nC

VDS = -20V, ID = -4.2A

Total Gate Charge (VGS = -10V)

Qg

—

11.1

—

nC

Gate-Source Charge

Qgs

—

1.5

—

nC

Gate-Drain Charge

Qgd

—

2

—

nC

Turn-On Delay Time

tD(ON)

—

3.6

—

ns

VDD = -15V, VGS = -10V,

RG = 6Ω, ID = -1A

Turn-On Rise Time

tR

—

2.9

—

ns

Turn-Off Delay Time

tD(OFF)

—

36.3

—

ns

Turn-Off Fall Time

tF

—

15.3

—

ns

Reverse Recovery Time

tRR

—

15.5

—

ns

IF = -4.2A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

16.9

—

nC

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.