DMC4015SSD

Document number: DS37348 Rev. 4 - 2

2 of 9

www.diodes.com

June 2018

© Diodes Incorporated

DMC4015SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value_Q1

Value_Q2

Units

Drain-Source Voltage

VDSS

40

-40

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

8.6

6.8

-6.2

-4.9

A

t<10s

TA = +25°C

TA = +70°C

ID

12.2

9.8

-8.8

-7.1

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

80

-50

A

Maximum Body Diode Forward Current (Note 6)

IS

2.5

-2.2

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

80

-50

A

Avalanche Current (Note 7) L = 0.1mH

IAS

27

-25

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

37

32

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.2

W

TA = +70°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RϴJA

106

°C/W

t<10s

45

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.7

W

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RϴJA

76

°C/W

t<10s

37

Thermal Resistance, Junction to Case (Note 6)

RϴJC

12

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

40





V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1



3

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)





15

m

Ω

VGS = 10V, ID = 3A





20

VGS = 4.5V, ID = 3A

Diode Forward Voltage

VSD



0.7

1.0

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



1810



pF

VDS = 20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



135



Reverse Transfer Capacitance

Crss



112



Gate Resistance

RG



1.7



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg



19



nC



VDS = 20V, ID = 3A

Total Gate Charge (VGS = 10V)

Qg



40



Gate-Source Charge

Qgs



5.5



Gate-Drain Charge

Qgd



6.3



Turn-On Delay Time

tD(on)



5.1



nS

VDD = 20V, ID = 3A

VGS = 10V, RG = 3Ω,

Turn-On Rise Time

tr



5.7



Turn-Off Delay Time

tD(off)



23



Turn-Off Fall Time

tf



6.3



Body Diode Reverse Recovery Time

trr



12.2



nS

IS = 3A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr



5.4



nC

IS = 3A, dI/dt = 100A/μs