3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

CMM1331-SM

Features

❏ 32.0 dBm (Typ.) Saturated Output Power

❏ 32.0 dB (Typ.) Linear Gain

❏ Fully Matched

❏ Unconditionally Stable

❏ Low-Cost Surface Mount Package

❏ Optimum Thermal Dissipation

Applications

❏ Ku-Band VSAT Transmit Subsystems

Description

The CMM1331-SM is a four-stage pHEMT GaAs

MMIC power amplifier that is ideally suited for transmit

subsystems designed for Ku-Band VSAT applications. The

CMM1331-SM provides 32.0 dB linear gain and delivers

1.5 watts of output power at saturation operating from

12.70 to 13.50 GHz frequency.

The unconditional stability and internal matching

provides for reduction of external components making this

product a simple and low-cost solution. The low-cost, 6mm x

6mm x 1.6mm surface mount package offers the same excel-

lent RF and thermal properties as a typical flange package.

12.70 to 13.50 GHz

1.5 Watt Power Amplifier

Advanced Product Specifications

October 2003

(1 of 2)

Pin Functional Diagram

Parameter

Condition

Min

Typ

Max

Units

Frequency Range

12.70

13.50

GHz

Output Power

@ 1dB compression

30.0

31.0

dBm

Saturated Output Power

Pout at Pin = 5.0 dBm

31.0

32.0

dBm

Output Power Variation

Over operating frequency

1.0

1.5

dBm

Linear Gain

29.0

32.0

35.0

dB

Linear Gain Variation

Over operating frequency

2.0

dB

Third Order Intercept Point

36.0

dBm

Input Reflection Coefficient

-10.0

dB

Output Reflection Coefficient

-7.0

dB

Gate Supply Voltage

Idq = 770 mA

-1.1

-0.9

-0.7

Volt

Drain Current

At Saturation

900

980

mA

Power Added Efficiency

At Saturation

22

26

%

Vdd 1

GROUND 2

RF IN 3

GROUND 4

Vgg 5

10 Vdd

9 GROUND

8 RF OUT

7 GROUND

6 Vgg

Parameter

Typ

Units

Parameter

Typ

Units

Drain Voltage (+Vdd)

8.5

Volts

RF Input Power (Pin)

7.0

dBm

Gate Voltage (Vgg)

-3.0

Volts

Dissipated Power (Pdiss)

7.2

Watts

Quiescent Current (Idq)

1000

mA

Storage Temperature

-50 to +150

°C

Gate Current (Ig)

5

mA

Operating Backside Temperature

-40 to +75

°C

Parameter

Condition

Min

Typ

Max

Units

Saturated Output Power

Variation from Room Temperature

-0.5

dBm

Linear Gain

Variation from Room Temperature

-2.5

3.5

dB

Stability

Unconditionally stable