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STO68N65DM6 bảng dữ liệu(PDF) 2 Page - STMicroelectronics

tên linh kiện STO68N65DM6
Giải thích chi tiết về linh kiện  N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STO68N65DM6 bảng dữ liệu(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID(1)
Drain current (continuous) at TC = 25 °C
55
A
Drain current (continuous) at TC = 100 °C
35
IDM(2)
Drain current (pulsed)
172
A
PTOT
Total power dissipation at TC = 25 °C
240
W
dv/dt(3)
Peak diode recovery voltage slope
100
V/ns
di/dt(3)
Peak diode recovery current slope
1000
A/μs
dv/dt(4)
MOSFET dv/dt ruggedness
100
V/ns
Tstg
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
°C
1. Referred to TO-247 package.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 55 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
4. VDS ≤ 520 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
0.52
°C/W
RthJB
Thermal resistance, junction-to-board(1)
43
°C/W
Thermal resistance, junction-to-board(2)
22
1. When mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.
2. When mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)
9
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
930
mJ
STO68N65DM6
Electrical ratings
DS13723 - Rev 1
page 2/15



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