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STGIPQ3H60T-HLS bảng dữ liệu(PDF) 14 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  SLLIMM-nano, 2nd series IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
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4
Shutdown function
The device is equipped with three half-bridge IC gate drivers and integrates a comparator for fault detection.
The comparator has an internal voltage reference VREF connected to the inverting input, while the non-inverting
input pin (CIN) can be connected to an external shunt resistor for current monitoring.
Since the comparator is embedded in the U IC gate driver, in case of fault it disables directly the U outputs,
whereas the shutdown of V and W IC gate drivers depends on the RC value of the external SD circuitry, which
fixes the disabling time.
For an effective design of the shutdown circuit, please refer to Application note AN4966.
Figure 11. Shutdown timing waveforms
∗
∗
∗
∗
≅
∗
_
∗
RSD and CSD external circuitry must be designed to ensure
Please refer to AN4966 for further details.
* RNTC to be considered only when the NTC is internally connected to the T/SD/OD pin.
HIN or LIN
HVG or LVG
open -drain gate
(interna l)
VREF
CI N
PROTECT ION
SD/OD
A
B
B
A
or
T/SD/OD
U
V, W
GADG250120171515FSR
STGIPQ3H60T-HLS, STGIPQ3H60T-HZS
Shutdown function
DS11141 - Rev 5
page 14/26



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