FGY160T65SPD−F085

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2

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Ratings

Unit

VCES

Collector to Emitter Voltage

650

V

VGES

Gate to Emitter Voltage

±20

V

Transient Gate to Emitter Voltage

±30

V

IC

Collector Current @ TC = 25°C (Note 1)

240

A

Collector Current @ TC = 100°C

220

A

INominal

Nominal Current

160

A

ICM

Pulsed Collector Current

480

A

IFM

Diode Forward Current @ TC = 25°C (Note 1)

240

A

Diode Forward Current @ TC = 100°C

188

A

PD

Maximum Power Dissipation @ TC = 25°C

882

W

Maximum Power Dissipation @ TC = 100°C

441

W

SCWT

Short Circuit Withstand Time @ TC = 25°C

6

ms

DV/Dt

Voltage Transient Ruggedness (Note 2)

10

V/ns

TJ

Operating Junction Temperature

−55 to +175

°C

Tstg

Storage Temperature Range

−55 to +175

°C

TL

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

300

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Limited to bondwire.

2. VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load.

THERMAL CHARACTERISTICS

Symbol

Parameter

Typ.

Max.

Units

RqJC (IGBT)

Thermal Resistance, Junction to Case

−

0.17

°C/W

RqJC (Diode)

Thermal Resistance, Junction to Case

−

0.32

°C/W

RqJA

Thermal Resistance, Junction to Ambient

−

40

°C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Package

Packing Type

Qty per Tube

FGY160T65SPD

FGY160T65SPD−F085

TP−247−3LD

Tube

30 ea

ELECTRICAL CHARACTERISTICS OF THE IGBT (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

BVCES

Collector to Emitter Breakdown Voltage

VGE = 0 V, IC = 1 mA

650

−

−

V

DBVCES/

DTJ

Temperature Coefficient of Breakdown

Voltage

VGE = 0 V, IC = 1 mA

−

0.6

−

V/°C

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0 V

−

−

40

mA

IGES

G−E Leakage Current

VGE = VGES, VCE = 0 V

−

−

±250

nA

ON CHARACTERISTICS

VGE(th)

G−E Threshold Voltage

IC = 160 mA, VCE = VGE

4.3

5.3

6.3

V

VCE(sat)

Collector to Emitter Saturation Voltage

IC = 160 A, VGE = 15 V

−

1.6

2.05

V

IC = 160 A, VGE = 15 V,

TJ = 175°C

−

2.15

−

V