STGO30H60DLLFBAG datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 5 V, IC = 30 A

1.6

2.0

VGE = 5 V, IC = 30 A, TJ = 125 °C

1.7

VGE = 5 V, IC = 30 A, TJ = 175 °C

1.75

Forward on-voltage

IF = 30 A

1.4

1.7

IF = 30 A, TJ = 125 °C

1.35

IF = 30 A, TJ = 175 °C

1.25

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

1.8

2.5

ICES

Collector cut-off current

VGE = 0 V, VCE = 600 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ± 10 V

±250

µA

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

5000

Coes

Output capacitance

120

Cres

Reverse transfer capacitance

Total gate charge

VCC = 520 V, IC = 30 A,

VGE = 5 V

110

Qge

Gate-emitter charge

Qgc

Gate-collector charge

Table 5. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off delay time

VCE = 400 V, IC = 30 A,

VGE = 5 V, RG = 10 Ω

402

Current fall time

Eoff(1)

Turn-off switching energy

540

µJ

td(off)

Turn-off delay time

VCE = 400 V, IC = 30 A,

VGE = 5 V, RG = 10 Ω,

TJ = 175 °C

434

Current fall time

Eoff(1)

Turn-off switching energy

660

µJ

1. Including the tail of the collector current.

STGO30H60DLLFBAG

Electrical characteristics

DS12913 - Rev 4

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