SN7002W datasheet(2/6 Pages) LEIDITECH

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5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10μAdc)

Zero Gate Voltage Drain Current TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250μAdc)

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain–Source On–State Resistance

(VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc)

TC = 25°C

TC = 125°C

Forward Transconductance

(VDS≥ 2.0 VDS(on), ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 115 mAdc, VGS = 0 V)

Source Current Continuous (Body Diode)

Source Current Pulsed

3.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

-800

-115

ISM

mAdc

5.0

VGS(th)

IDSS

gfs

mmhos

mAdc

Cibo

Cobo

Cibo

2.5

IGSSF

1.0

Typ.

Max.

IGSSR

-1.0

VBRDSS

Vdc

Symbol

Min.

μAdc

Ohms

Vdc

Unit

1.0

Vdc

500

1.4

7.5

13.5

2.5

13.5

1.8

7.5

1.6

3.75

0.375

RDS(on)

1.0

ID(on)

500

VDS(on)

Turn-On Delay Time

(VDD = 25 Vdc , ID =500

mAdc, RG = 25Ω,RL = 50

Ω,Vgen = 10 V)

Turn-Off Delay Time

td(off)

td(on)

VSD

Vdc

-1.5

Rev :

www.leiditech.com

01.06.2015

2/6

SN7002W

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