STPSC20065C datasheet(4/10 Pages) STMICROELECTRONICS

tên linh kiện	STPSC20065C

Giải thích chi tiết về linh kiện	650 V, dual 10 A, power Schottky silicon carbide diode

PDF	10 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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4 / 10 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, per diode)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IF(

VF (V)

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

150

200

250

300

350

400

450

500

550

600

650

IR(µA)

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

Figure 3. Peak forward current versus case temperature

( per diode)

100

125

150

175

I M (A)

δ =0.1

δ =0.3

δ =0.5

δ =0.7

δ =1

TC(°C)

δ=tp/T

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

200

300

400

500

600

700

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

VR(V)

Cj (pF)

STPSC20065C

Characteristics (curves)

DS12994 - Rev 1

page 4/10

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