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STGIB30M60S-L bảng dữ liệu(PDF) 12 Page - STMicroelectronics

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4.1
Smart shutdown function
The device integrates a comparator committed to the fault sensing function. The comparator input can be
connected to an external shunt resistor in order to implement a simple overcurrent detection function.
The output signal of the comparator is fed to an integrated MOSFET with the open drain output available on the
SD input. When the comparator triggers, the device is set in shutdown state and its outputs are all set to low level.
Figure 6. Smart shutdown timing waveforms in case of overcurrent event
LIN
LVG
SD
open-drain gate
(internal)
comp
Vref
CIN
PROTECTION
Fast shutdown:
the driver outputs are set in SD state
immediately after comparator triggering
even if the SD signal has not yet reached
the lower input threshold
real disable time
t
OC
t2
t1
SD
FROM / TO
CONTROLLER
VBIAS
SMART
SD
LOGIC
CSD
RSD
R ON_OD
R PD_SD
SHUTDOWN CIRCUIT
where:
l
t CIN_SD
t1
t2
RON_OD = VOD/5 mA, see Table 10. Sense comparator (VCC = 15 V, unless otherwise is specified);
RPD_SD (typ.) = 5 V/ISDh
STGIB30M60S-L
Smart shutdown function
DS12605 - Rev 4
page 12/23



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