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A2C50S65M2 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện A2C50S65M2
Giải thích chi tiết về linh kiện  ACEPACKTM 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
PDF  16 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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A2C50S65M2 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2320 A/µs
147
ns
tr
Current rise time
17.5
ns
Eon(1)
Turn-on switching energy
0.147
mJ
td(off)
Turn-off delay time
VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 7400 V/µs
105
ns
tf
Current fall time
133
ns
Eoff(2)
Turn-off switching energy
1.36
mJ
td(on)
Turn-on delay time
VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2010 A/µs, TJ = 150 °C
147
ns
tr
Current rise time
20
ns
Eon(1)
Turn-on switching energy
0.318
mJ
td(off)
Turn-off delay time
VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
dv/dt = 6000 V/µs, TJ = 150 °C
104
ns
tf
Current fall time
194
ns
Eoff(2)
Turn-off switching energy
1.82
mJ
tSC
Short-circuit withstand time
VCC ≤ 360 V, VGE≤ 15 V,
TJstart ≤ 150 °C
6
µs
RTHj-c
Thermal resistance junction-to -
case
Each IGBT
0.65
0.72
°C/W
RTHc-h
Thermal resistance case-to-
heatsink
Each IGBT, λgrease = 1 W/(m·°C)
0.79
°C/W
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
1.2.2
Diode
Table 7. Absolute maximum ratings of the diode, brake stage
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF
Continuous forward current (TC = 100 °C)
50
A
IFP (1)
Pulsed forward current (tp = 1 ms)
100
A
TJMAX
Maximum junction temperature
175
°C
TJop
Operating junction temperature range under switching conditions
-40 to 150
°C
1. Pulse width limited by maximum junction temperature.
Table 8. Electrical characteristics of the diode, brake stage
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF (terminal)
Forward voltage
IF = 50 A
-
1.85
V
IF = 50 A, TJ = 150 ˚C
-
1.65
trr
Reverse recovery time
IF = 50 A, VR = 300 V,
VGE = ±15 V, di/dt = 2320 A/μs
-
155
ns
Qrr
Reverse recovery charge
-
2.32
µC
Irrm
Reverse recovery current
-
41
A
Erec
Reverse recovery energy
-
0.53
mJ
A2C50S65M2
Brake stage
DS12340 - Rev 3
page 5/16



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