STPSC20065D datasheet(1/13 Pages) STMICROELECTRONICS

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July 2017

DocID029246 Rev 2

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This is information on a product in full production.

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STPSC20065

650 V power Schottky silicon carbide diode

Datasheet - production data

Features



No reverse recovery charge in application

current range



Switching behavior independent of

temperature



Dedicated to PFC applications



Insulated package TO-220AC ins:



Insulated voltage: 2500 V rms



Typical package capacitance: 7 pF



High forward surge capability



ECOPACK®2 compliant component



Maximum operating: Tj 175 °C

Description

The SiC diode is an ultra high performance

power Schottky diode. It is manufactured using a

silicon carbide substrate. The wide band gap

material allows the design of a Schottky diode

structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost performance in hard

switching conditions. Its high forward surge

capability ensures good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

20 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

DO-247

A

K

A

K

NC

TO-220AC Ins

TO-220AC

Số phần tương tự - STPSC20065D

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