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RHRPM4423LK01V bảng dữ liệu(PDF) 9 Page - STMicroelectronics |
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RHRPM4423LK01V bảng dữ liệu(HTML) 9 Page - STMicroelectronics |
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9 / 31 page ![]() 6 Radiations 6.1 Total ionizing dose (MIL-STD-883 test method 1019) The products that are guaranteed in radiation within RHA QML-V system, fully comply with the MIL-STD-883 test method 1019 specification. The RHRPM4423 is being RHA QML-V qualified, tested and characterized in full compliance with the MIL-STD-883 specification, both below 10 mrad/s (low dose rate) and between 50 and 300 rad/s (high dose rate). • Testing is performed in accordance with MIL-PRF-38535 and the test method 1019 of the MIL-STD-883 for total ionizing dose (TID). • ELDRS characterization is performed in qualification only on both biased and unbiased parts, on a sample of ten units from two different wafer lots. • Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification. Table 5. TID Type Conditions Value Unit TID 50 rad(Si)/s high dose rate up to 100 krad 10 mrad(Si)/s low dose rate up to 100 ELDRS free up to 100 Output stage source resistance drift From 0 krad to 100 krad at 50 rad/s < 0.3 Ω Output stage sink resistance drift From 0 krad to 100 krad at 50 rad/s < 0.3 Ω 6.2 Heavy ions The heavy ions trials are performed on qualification lots only. No additional test is performed. The table below summarizes the results of heavy ion tests. Table 6. HI Feature Conditions Value Unit SEL/SEB LET = 60 MeV.cm²/mg VCC = 18 V No latch-up/burnout - LET = 70 MeV.cm²/mg VCC = 16 V No latch-up/burnout SET VCC = 4.5 V LETTH = 18.5 MeV*cm²/mg σSAT = 7*10-6 cm² VCC = 18 V LETTH = 18 MeV*cm²/mg σSAT = 2*10-6 cm² RHRPM4423 Radiations DS11827 - Rev 3 page 9/31 |
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