STPS80A45CHR datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

1.1

Absolute maximum ratings

The absolute maximum ratings are limiting values at 25°C, per diode unless otherwise notified. Values provided in

Table 1. Absolute maximum ratings shall not be exceeded at any time during use or storage.

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IO(1)

Average output rectified current

per diode

per package

IFSM(2)

Forward surge current

200

dV/dt(3)

Reverse voltage maximum rise rate

kV/µs

Top

Operating temperature range (case temperature)

-65 to +175

°C

Tj(4)

Maximum junction temperature

+175

°C

Tstg

Storage temperature range

-65 to +175

°C

Tsol(5)

Soldering temperature

+245

°C

ESD

Electrostatic discharge - Human Body Model

1. Per diode: at Tcase > 63.5°C, derate linearly to 0 A at 175 °C; per device, at Tcase > - 8.6 °C, derate linearly to 0 A at 175 °C.

2. Sinusoidal pulse of 10ms duration.

3. guaranteed by design, characterization and test at 25°C of 10 parts per wafer lot.

4. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

5. Duration 5 seconds maximum with at least 3 minutes between consecutive temperature peaks.

1.2

Thermal parameters

Table 2. Thermal parameters

Symbol

Parameter

Typ. value

Max. value

Unit

Rth(j-c) (1)

Thermal resistance, junction to case

Per diode

3.4

°C/W

Per package

2.8

1. When only 1 diode is used, the dissipation is made from a part of the die, hence to a higher thermal resistance.

STPS80A45CHR

Characteristics

DS13146 - Rev 2

page 2/10

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