STM2A60 datasheet(2/6 Pages) SEMIWELL

tên linh kiện	STM2A60

Giải thích chi tiết về linh kiện	Bi-Directional Triode Thyristor

PDF	6 Pages

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2 / 6 page

Electrical Characteristics

Symbol

Items

Conditions

Ratings

Unit

Min.

Typ.

Max.

IDRM

Repetitive Peak Off-State

Current

VD = VDRM, Single Phase, Half Wave

TJ = 125 °C

──

0.5

VTM

Peak On-State Voltage

IT = 2.1 A, Inst. Measurement

──

1.6

I+GT1

Ⅰ

Gate Trigger Current

VD = 6 V, RL=10 Ω

──

I -GT1

Ⅱ

──

I -GT3

Ⅲ

──

V+GT1

Ⅰ

Gate Trigger Voltage

VD = 6 V, RL=10 Ω

──

1.5

V-GT1

Ⅱ

──

1.5

V-GT3

Ⅲ

──

1.5

VGD

Non-Trigger Gate Voltage

TJ = 125 °C, VD = 1/2 VDRM

0.2

──

dv/dt

Critical Rate of Rise Off-State

Voltage

TJ = 125 °C, VD=2/3 VDRM

exponential waveform, gate open circuit

1000

──

V/㎲

(dv/dt)c

Critical Rate of Rise Off-State

Voltage at Commutation

TJ = 125 °C, [di/dt]c = -0.75 A/ms,

VD=2/3 VDRM

5.0

──

V/㎲

Holding Current

─

Rth(j-sp)

Thermal Impedance

Junction to solder point

──

°C/W

Rth(j-a)

Thermal Impedance

(pcb mounted)

Junction to Ambient(minimum footprint)

──

156

°C/W

Junction to Ambient(pad area as in fig 11.)

──

°C/W

STM2A60

2/6

※

Notes :

1. Pulse Width ≤ 300us , Duty cycle ≤ 2%

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