SCF6C60 datasheet(1/5 Pages) SEMIWELL

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Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )

Symbol

Parameter

Condition

Ratings

Units

VDRM

Repetitive Peak Off-State Voltage

600

V

IT(AV)

Average On-State Current

Half Sine Wave : TC = 100 °C

3.8

A

IT(RMS)

R.M.S On-State Current

180° Conduction Angle

6

A

ITSM

Surge On-State Current

1/2 Cycle, 60Hz, Sine Wave

Non-Repetitive

66

A

I2t

I2t for Fusing

t = 8.3ms

21

A2s

di/dt

Critical rate of rise of on-state current

50

A/㎲

PGM

Forward Peak Gate Power Dissipation

5

W

PG(AV)

Forward Average Gate Power Dissipation

0.5

W

IFGM

Forward Peak Gate Current

2

A

VRGM

Reverse Peak Gate Voltage

5.0

V

VISO

Isolation Breakdown Voltage(R.M.S.)

A.C. 1 minute

1500

V

TJ

Operating Junction Temperature

- 40 ~ 125

°C

TSTG

Storage Temperature

- 40 ~ 150

°C

SCF6C60

Aug, 2003. Rev. 1

Features

◆

Repetitive Peak Off-State Voltage : 600V

◆

R.M.S On-State Current ( IT(RMS)= 6 A )

◆

Low On-State Voltage (1.4V(Typ.)@ ITM)

◆

Isolation Voltage ( VISO = 1500V AC )

General Description

Standard gate triggering SCR is fully isolated package suitable for

the application where requiring high bidirectional blocking voltage

capability and also suitable for over voltage protection ,motor

control circuit in power tool, inrush current limit circuit and heating

control system.

3. Gate

1. Cathode

Symbol

○

1/5

SemiWell Semiconductor

Silicon Controlled Rectifiers

○

2. Anode

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.

TO-220F

1

2

3

Số phần tương tự - SCF6C60

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