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PACUSB-U2R bảng dữ liệu(PDF) 4 Page - California Micro Devices Corp |
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PACUSB-U2R bảng dữ liệu(HTML) 4 Page - California Micro Devices Corp |
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4 / 7 page ![]() © 2006 California Micro Devices Corp. All rights reserved. 4 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 05/01/06 PACUSB-U1/U2/U3 Specifications (con’t) Note 1: ESD applied to input/output/V3.3 pins with respect to GND, one at a time. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin (i.e., if ESD is applied to pin 1, then clamping voltage is measured at pin 6). Unused pins are open. Note 2: These parameters guaranteed by design. ELECTRICAL OPERATING CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R1 Resistance R1 (PACUSB-U1 only) Measured at TA = 25°C 12 15 18 Ω R1 Resistance R1 (PACUSB-U2 only) Measured at TA = 25°C 26 33 40 Ω R1 Resistance R1 (PACUSB-U3 only) Measured at TA = 25°C 18 22 26 Ω R2 Resistance R2 Measured at TA = 25°C 1.2 1.5 1.8 k Ω C1 Capacitance C1 Measured at 1 MHz, 2.5VDC, TA =25°C 38 47 56 pF ILEAK Diode Leakage Current to GND At 3.3VDC and TA = 25°C 1 100 nA VD1 Diode Reverse-biased Stand-off Voltage I = 10 μA,TA = 25°C 5.5 V VD2 Signal Clamp Voltage Positive Clamp Negative Clamp @ 10mA, TA = 25°C @ 10mA, TA = 25°C 5.6 -1.2 6.8 -0.8 8.0 -0.4 V V VESD In-system ESD Withstand Voltage Human Body Model, MIL-STD-883, Method 3015 IEC 61000-4-2, contact discharge method (I/O pins) IEC 61000-4-2, contact discharge method (V3.3 pin) Notes 1,2 Notes 1,2 Notes 1,2 ±30 ±15 ±25 kV kV kV VCLAMP Clamping Voltage during ESD Discharge Positive Negative MIL-STD-883, Method 3015, 8kV; Notes 1,2 10 -5 V V |
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