F2CD10170P datasheet(1/5 Pages) FS

tên linh kiện	F2CD10170P

Giải thích chi tiết về linh kiện	1700V Silicon Carbide

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S E M I C O N D U C TO R

TECHNICAL DATA

F2CD10170P

2022.05.25

Revision No : 0

1/5

Symbol

Parameter

Value

Units

VRRM

Repetitive Peak Reverse Voltage

1700

V

VRSM

Surge Peak Reverse Voltage

1700

V

VDC

DC Blocking Voltage

1700

V

IF

Continuous Forward Current

TC

= 25˚C

TC

= 160˚C

36

10

A

IFRM

Repetitive Peak Forward Current

TC

= 110˚C

83

A

IFSM

Non-Repetitive Forward Surge Current TC

= 25˚C

(PW=10ms sinusoidal)

TC

= 110˚C

60

50

A

PD

Power Dissipation

TC

= 25˚C

214

W

TJ, Tstg

Operating Junction and Storage Temperature

-55 to +175

℃

F2CD10170P

1700V Silicon Carbide Diode

Features

- 1700-Volt Schottky Rectifier

- Shorter recovery time

- High-speed switching possible

- High-Frequency Operation

- Temperature-Independent Switching Behavior

- Extremely Fast Switching

- Positive Temperature Coefficient on VF

- RoHS Compliant

Applications

- Switch Mode Power Supplies

- Power Factor Correction

- Motor Drives

- HID Lighting

Package Outline

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Anode

Cathode

TO-247_2L

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First Silicon Co., Ltd	F2CD40120B	431Kb / 5P	1200V Silicon Carbide 2022.05.25 Revision No : 0

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