LMK6C datasheet(7/45 Pages) TI

7 / 45 page

7.5 Thermal Information

THERMAL METRIC(1)

LMK6P/D/H

UNIT

DLE (VSON)

DLF (VSON)

6 PINS

RθJA

Junction-to-ambient thermal resistance

101.2

107.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

58.6

70.1

°C/W

RθJB

Junction-to-board thermal resistance

31.3

39.4

°C/W

ΨJT

Junction-to-top characterization parameter

2.7

2.3

°C/W

ΨJB

Junction-to-board characterization parameter

31.1

39.2

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.6 Thermal Information

THERMAL METRIC(1)

LMK6C

UNIT

DLE

DLF

4 PINS

RθJA

Junction-to-ambient thermal resistance

124.8

128.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

61.2

73.2

°C/W

RθJB

Junction-to-board thermal resistance

42.5

39.8

°C/W

ΨJT

Junction-to-top characterization parameter

2.8

2.4

°C/W

ΨJB

Junction-to-board characterization parameter

42.3

39.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.7 Electrical Characteristics

Over Recommended Operating Conditions

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current Consumption Characteristics

IDD

Device Power Consumption

LVPECL output, Fout ≤ 200 MHz(1)

TBD

IDD

Device Power Consumption

LVPECL output, 200 MHz < Fout ≤

400MHz(1)

TBD

IDD

Device Power Consumption

LVDS output, Fout ≤ 200 MHz(1)

TBD

IDD

Device Power Consumption

LVDS output, 200 MHz < Fout ≤

400MHz(1)

TBD

IDD

Device Power Consumption

LVCMOS output, Fout ≤ 200 MHz, CL =

No Load

TBD

IDD-PD

Device Power-Down Current

OE = GND

TBD

LVPECL Output Characteristics

Fout

Output Frequency

400

MHz

VOD