BAS40 datasheet(1/2 Pages) SAMYANG

tên linh kiện	BAS40

Giải thích chi tiết về linh kiện	SCHOTTKY BARRIER RECTIFIER

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BAS40 --- BAS40-06

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 40 V

CURRENT: 0.2 A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

www.diode.co.kr 1.

SAMYANG ELECTRONICS

SAM YANG

Ratings at

ambient temperature unless otherwise specified.

25 °C

SOT 23

-

Dimensions in inches and (millimeters)

0 037 0 95

.

( .

)

0 055 1 40

.

( .

)

0 0005 0 013

.

( .

)

0 004 0 100

.

( .

)

0 087 2 2

.

( . )

0 118 3 0

.

( . )

0 047 1 20

.

( .

)

0 065 1 65

.

( .

)

0 083 2 70

.

( .

)

0 106 3 10

.

( .

)

0 014 0 35

.

( .

)

0 020 0 50

.

( .

)

0 003

.

( . )

0 08

0 007 0 19

.

( .

)

0 07 1 78

.

( .

)

0 08 2 04

.

( .

)

0 035 0 89

.

( .

)

0 040 1 02

.

( .

)

W

m

0

1

3

g

n

u

t

s

i

e

lt

s

u

lr

e

V

–

n

o

it

a

p

i

s

i

d

r

e

w

o

P

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

40 V

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

g

1

0

.

0

.

a

c

t

h

c

i

w

e

G

–

.

x

o

r

p

a

t

h

g

i

e

W

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

per diode / pro Diode

BAS40-series

Power dissipation – Verlustleistung 1

P

)

tot

310 mW 2)

Max. average forward current (dc)

Dauergrenzstrom

IFAV

200 mA 2)

Repetitive peak forward current

Periodischer Spitzenstrom

IFRM

300 mA 2)

Non repetitive peak forward surge current

Stoßstrom-Grenzwert

tp ≤ 1 s

IFSM

0.6 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

VRRM

40 V

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Forward voltage 3)

Durchlass-Spannung 3)

IF = 1 mA

IF = 10 mA

IF = 40 mA

VF

< 380 mV

< 500 mV

< 1.00 V

Leakage current

Sperrstrom

VR = 30 V

VR = 40 V

IR

< 200 nA

< 10 µA

Max. junction capacitance – Max. Sperrschichtkapazität

VR = 0 V, f = 1 MHz

CT

5 pF

Reverse recovery time – Sperrverzug

IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA

trr

< 5 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 400 K/W 2)

Số phần tương tự - BAS40

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Siemens Semiconductor G...	BAS40	108Kb / 5P	Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
Siemens Semiconductor G...	BAS40	96Kb / 4P	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)
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General Semiconductor	BAS40	51Kb / 2P	Schottky Diodes

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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