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RA4M2 bảng dữ liệu(PDF) 66 Page - Renesas Technology Corp

tên linh kiện RA4M2
Giải thích chi tiết về linh kiện  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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RA4M2 bảng dữ liệu(HTML) 66 Page - Renesas Technology Corp

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Offset error
Offset error is the difference between the transition point of the ideal first output code and the actual first output code.
Full-scale error
Full-scale error is the difference between the transition point of the ideal last output code and the actual last output code.
2.6
DAC12 Characteristics
Table 2.38
D/A conversion characteristics
Parameter
Min
Typ
Max
Unit
Test conditions
Resolution
—
—
12
Bits
—
Without output amplifier
Absolute accuracy
—
—
±24
LSB
Resistive load 2 MΩ
INL
—
±2.0
±8.0
LSB
Resistive load 2 MΩ
DNL
—
±1.0
±2.0
LSB
—
Output impedance
—
8.5
—
kΩ
—
Conversion time
—
—
3
µs
Resistive load 2 MΩ, Capacitive load 20 pF
Output voltage range
0
—
VREFH
V
—
With output amplifier
INL
—
±2.0
±4.0
LSB
—
DNL
—
±1.0
±2.0
LSB
—
Conversion time
—
—
4.0
µs
—
Resistive load
5
—
—
kΩ
—
Capacitive load
—
—
50
pF
—
Output voltage range
0.2
—
VREFH – 0.2
V
—
2.7
TSN Characteristics
Table 2.39
TSN characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Relative accuracy
—
—
± 1.0
—
°C
—
Temperature slope
—
—
4.0
—
mV/°C
—
Output voltage (at 25 °C)
—
—
1.24
—
V
—
Temperature sensor start time
tSTART
—
—
30
µs
—
Sampling time
—
4.15
—
—
µs
—
2.8
OSC Stop Detect Characteristics
Table 2.40
Oscillation stop detection circuit characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Detection time
tdr
—
—
1
ms
Figure 2.55
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 66 of 92



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