D1NK60 datasheet(3/15 Pages) STMICROELECTRONICS

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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 15 V, ID= 0.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

156

23.5

3.8

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 300 V, ID = 0.5 A,

RG= 4.7 Ω, VGS = 10 V

(Resistive Load see, Figure

21)

6.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 480V, ID = 1 A,

VGS = 10V, RG= 4.7 Ω

(see, Figure 23)

1.1

3.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 1.0 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 1.0 A, di/dt = 100 A/µs

VDD = 25V, Tj = 25°C

(see test circuit, Figure 22)

140

240

3.3

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 1.0 A, di/dt = 100 A/µs

VDD = 25V, Tj = 150°C

(see test circuit, Figure 22)

229

377

3.3

µC

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