IRFP048R datasheet(2/11 Pages) VISHAY

2 / 11 page

IRFP048R, SiHFP048R

www.vishay.com

Vishay Siliconix

S16-0015-Rev. C, 18-Jan-16

Document Number: 91199

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Current limited by the package (die current = 73 A).

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-0.80

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 44 A b

0.018



Forward Transconductance

gfs

VDS = 25 V, ID = 44 A b

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

2400

Output Capacitance

Coss

1300

Reverse Transfer Capacitance

Crss

-190

Total Gate Charge

VGS = 10 V

ID = 72 A, VDS = 48 V

see fig. 6 and 13 b

110

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 72 A,

Rg = 9.1 , RD = 0.34, see fig. 10 b

-8.1

Rise Time

-250

Turn-Off Delay Time

td(off)

-210

Fall Time

-250

Internal Drain Inductance

Between lead,



6 mm (0.25") from

package and center of

die contact

-5.0

Internal Source Inductance

-13

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the



integral reverse



p - n junction diode

70c

Pulsed Diode Forward Current a

ISM

290

Body Diode Voltage

VSD

TJ = 25 °C, IS = 73 A, VGS = 0 V b

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs b

120

180

Body Diode Reverse Recovery Charge

Qrr

0.50

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

IRFP048R bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

IRFP048R bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9 10 11

bảng dữ liệu tải về

Link URL