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MSD103C bảng dữ liệu(PDF) 2 Page - AiT Semiconductor Inc. |
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MSD103C bảng dữ liệu(HTML) 2 Page - AiT Semiconductor Inc. |
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2 / 5 page ![]() AiT Semiconductor Inc. www.ait-ic.com MSD103A~MSD103C SCHOTTKY DIODES SCHOTTKY BARRIER SWITCHING DIODE REV1.0 - JAN 2012 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS @ TA = 25℃, unless otherwise specified Parameter Symbol MSD103A MSD103B MSD103C Unit Peak Repetitive Reverse Voltage VRRM 40 30 20 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous CurrentNOTE1 IFM 350 mA Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s IFSM 1.5 A Power DissipationNOTE1 PD 400 mW Thermal Resistance, Junction to Ambient AirNOTE1 RθJA 300 ℃/W Operating and Storage Temperature Range TJ, TSTG -65 to +125 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Part mounted on FR-4 board with recommended pad layout, which can be found on our website ELECTRICAL CHARACTERISTICS @ TA = 25°C, unless otherwise specified Parameter Symbol Conditions Min Typ. Max Units Reverse Breakdown VoltageNOTE2 V(BR)R IR = 100μA MSD103A 40 - - V MSD103B 30 - - MSD103C 20 - - Forward Voltage DropNOTE2 VFM IF = 20mA - - 0.37 V IF = 200mA - - 0.60 Peak Reverse CurrentNOTE2 IRM VR = 30V MSD103A - - 5.0 µA VR = 20V MSD103B - - VR = 10V MSD103C - - Total Capacitance CT VR = 0V, f = 1.0MHz 28 pF Reverse Recovery Time trr IF = IR = 200mA, Irr = 0.1 x IR, RL = 100Ω 10 ns NOTE2: Short duration test pulse used to minimize self-heating effect. |
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