MMSD301 datasheet(2/6 Pages) AITSEMI

2 / 6 page

AiT Semiconductor Inc.

www.ait-ic.com

MMSD301/MMSD701

SCHOTTKY DIODE

REVERSE VOLTAGE 30V/70V

REV1.0

- APR 2017 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

@TA=25°C, unless otherwise specified

VR, Reverse Voltage

MMSD301

30V

MMSD701

70V

PF, Forward Power Dissipation

225mW

TJ, Junction Temperature

-55°C~+125°C

TSTG, Storage Temperature Range

-55°C~+150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min.

Typ.

Max. Unit

Reverse Breakdown Voltage

V(BR)R

IR=10μA

MMSD301

MMSD701

Diode Capacitance

VR=0,

f=1.0MHz

MMSD301

0.9

1.5

MMSD701

0.5

1.0

Total Capacitance

VR=15V,

f=1.0MHz

MMSD301

0.9

1.5

VR=20V,

f=1.0MHz

MMSD701

0.5

1.0

Reverse Leakage

VR=25V

MMSD301

200

VR=35V

MMSD701

9.0

200

Forward Voltage

IF=1.0mA

IF=10mA

MMSD301

0.38

0.52

0.45

0.6

IF=1.0mA

IF=10mA

MMSD701

0.42

0.7

0.5

1.0

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