DAMB5111 datasheet(1/1 Pages) DAICO

tên linh kiện	DAMB5111

Giải thích chi tiết về linh kiện	Amplifier

PDF	1 Pages

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nhà sản xuất	DAICO [DAICO Industries, Inc.]

Trang chủ	http://www.daico.com

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MODEL NO.

DAMB5111

Amplifier

FEATURES

1-8 GHz Broad Bandwidth

Typical Gain of 8 dB

+16 dBm P-out @ 1 dB compression

Single Power Supply

Input/Output VSWR Typical 1.5:1

20-Pin Hermetic Package

Available as Die, Part# DAMB4011D

AMPR

DA ICO

I ndustries

Rev. ND / Iss. 1

.310

±.003

.310

±.003

.045

±.005

.080

±.010

.016

±.001

.005

±.001

.02 7

±.004

.125 Dia.

±.003

Thermal

Button

PIN 1

.050 Typ.

.020

±.002

•

1

2

3

4

5

6789

10

11

12

13

14

15

16

17

18

19

20

N/C

OUTPUT

N/C

INPUT

100pF

+12V

0

1

2

3

4

5

6

7

8

9

10

02468

10

12

FREQUENCY (GHz)

Gain vs. Freq. (packaged)

Note:

1. Min / Max Values Listed are Production Tested

2. Frequency Separation of Two Signals is 500 KHz

ELECTRICAL SPECIFICATIONS

TA = 25

˚C, VDD = +12V, RF = 4.0 GHz

Parameter

Min

Typ

Max Units

Frequency of Operation

1

8

GHz

Gain

6.8

8

dB

Gain Flatness

±0.5

±1.0

dB

Noise Figure

5

dB

Output 1 dB Compression

+16

dBm

Input / Output VSWR

1.5:1

2:1

Reverse Isolation

18

23

dB

Output Third-Order Intercept

+28

dBm

DC Power Supply

10

12

15

V

Supply Current

100

120

mA

(1)

(2)

FREQ

S11

S21

S12

S22

GHz

MAG. ANG.

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

0.5

0.031

26

2.398

-169

0.016

82

0.371

-60

1.0

0.054

-66

2.834

159

0.028

56

0.304

-86

2.0

0.052

-140

2.662

115

0.041

35

0.247

-135

3.0

0.033

-114

2.528

80

0.061

18

0.236

-177

4.0

0.077

-102

2.486

47

0.080

-7

0.224

141

5.0

0.141

-122

2.561

14

0.097

-37

0.168

101

6.0

0.195

-145

2.683

-26

0.105

-74

0.060

70

7.0

0.216

-176

2.644

-68

0.104

-115

0.096

160

8.0

0.113

150

2.673

-116

0.112

-163

0.166

110

9.0

0.258

-122

2.473

177

0.135

126

0.070

-97

10.0

0.407

176

1.675

113

0.133

60

0.339

152

10.5

0.069

111

2.282

52

0.180

8

0.206

57

S-Parameters (typical) -I

DD

= 99.1 mA

Note:

1. Test Conditions: VDD = +12V, TA = 25

°C.

2. S-Parameters and other data have been measured with the die

in a microstrip test fixture as shown in the typical bonding diagram.

OUTPUT

INPUT

02468

10

12

-10

-15

-20

-25

-30

-5

0

FREQUENCY (GHz)

Input / Output Return Loss vs. Freq. (packaged)

Số phần tương tự - DAMB5111

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