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2022 Microchip Technology Inc. and its subsidiaries
DS20006638A-page 3
MIC4423/4/5
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ..........................................................................................................................................................+22V
Input Voltage .................................................................................................................................. VS +0.3V to GND –5V
Junction Temperature............................................................................................................................................ +150°C
Storage Temperature Range.................................................................................................................. –65°C to +150°C
Lead Temperature (10 sec.).................................................................................................................................. +300°C
ESD Susceptability, (Note 1)...................................................................................................................................1000V
Operating Ratings ‡
Supply Voltage (VS) ................................................................................................................................... +4.5V to +18V
Package Thermal Resistance
DIP JA................................................................................................................................................................130°C/W
DIP JC..................................................................................................................................................................42°C/W
Wide-SOIC JA....................................................................................................................................................120°C/W
Wide-SOIC JC......................................................................................................................................................75°C/W
SOIC JA.............................................................................................................................................................120°C/W
SOIC JC...............................................................................................................................................................75°C/W
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. Specifications are for packaged product only.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: 4.5V ≤ VS ≤ 18V; TA = +25°C, Bold values indicate –40°C ≤ TA ≤ +85°C; unless
otherwise specified. Specifications for packaged product only.
Parameter
Symbol
Min.
Typ.
Max.
Units Conditions
Input
Logic 1 Input Voltage
VIH
2.4
—
—
V
—
Logic 0 Input Voltage
VIH
—
—
0.8
V
—
Input Current
IIN
–1
—
1
µA
0V ≤ VIN ≤ VS
–10
—
10
—
Output
High Output Voltage
VOH
VS–0.025
—
—
V
—
Low Output Voltage
VOL
—
—
0.025
V
—
Output Resistance HI State
RO
—
2.8
5
Ω
IOUT = 10 mA, VS = 18V
—
3.7
8
Ω
VIN = 0.8V, IOUT = 10 mA, VS =
18V
Output Resistance LO State
—
3.5
5
Ω
IOUT = 10 mA, VS = 18V
—
4.3
8
Ω
VIN = 2.4V, IOUT = 10 mA, VS =
18V
Peak Output Resistance
IPK
—
3
—
A
—
Latch-Up Protection Withstand
Reverse Current
I
>500
—
—
mA
—



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