2N7002K datasheet(2/5 Pages) TUOFENG

tên linh kiện	2N7002K

Giải thích chi tiết về linh kiện	N-Channel 60-V(D-S) MOSFET

PDF	5 Pages

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nhà sản xuất	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Trang chủ	http://www.sztuofeng.com/?lang=en

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,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

2N7002K

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

VDS

VGS = 0V, ID =250µA

Gate Threshold Voltage*

VGS(th)

VDS =VGS, ID =1mA

1.2

1.6

Zero Gate Voltage Drain Current

IDSS

VDS =48V,VGS = 0V

µA

VGS =±20V, VDS = 0V

Gate –Source leakage current

±10

VGS = 10V, ID =500mA

2.0

2.5

Ω

Drain-Source On-Resistance*

RDS(on)

VGS =4.5V,ID=500mA

2.5

3.2

Ω

Diode Forward Voltage

VSD

VGS=0V, IS=500mA

1.3

0.8

Dynamic Characteristics**

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics**

Turn-On Delay Time

td(on)

Turn-Off Delay Time

td(off)

Notes :

*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

IGSS

0.7

Total gate charge

VDS =15V,VGS =4.5V,ID =0.2A

VDS =25V,VGS =0V,f =1MHz

VDD=30V,ID =0.2A

RL=150Ω, VGEN=10V,Rg=10Ω

Mar

µA

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