4812 datasheet(2/5 Pages) TUOFENG

2 / 5 page

Page

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

1.1

1.6

ID(ON)

Ω

gFS

VSD

0.8

1.2

Ciss

680

Coss

102

Crss

3.6

Ω

Qg (10V)

13.8

Qg (4.5V)

Qgs

Qgd

tD(on)

tD(off)

20.6

trr

16.5

Qrr

7.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=0V, VDS=15V, f=1MHz

Input Capacitance

Output Capacitance

Turn-On Rise Time

Turn-Off DelayTime

VDD= 15V, VGEN= 10V, RL=2.2Ω

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Total Gate Charge (10V)

VDD= 15V, VGEN = 10V, ID= 6.9A

Ω

VGS= 4.5V, ID= 5.0A

IS= 3A,VGS=0V

VDS = 5V, ID = 6.9A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS ID= 250µA

VDS= 30V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF= 6.9A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID= 250µA, VGS=0V

VGS= 4.5V, VDS= 5V

VGS= 10V, ID= 6.9A

Reverse Transfer Capacitance

IF= 6.9A, dI/dt=100A/µs

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

2.0

6.7

1.8

3.2

4.1

4.6

5.2

3.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4812

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