4622 datasheet(5/8 Pages) TUOFENG

5 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

-20

-1

IGSS

±100

VGS(th)

-1.3

-0.9

-0.5

ID(ON)

-25

gFS

VSD

-0.76

-1

-2.5

Ciss

800

960

Coss

131

Crss

103

6.7

Ω

Qg(10V)

15.5

Qg(4.5V)

7.4

Qgs

1.3

Qgd

2.9

tD(on)

4.4

7.6

tD(off)

13.5

trr

Qrr

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±12V

Gate Threshold Voltage

VDS=VGS ID=-250µA

On state drain current

VGS=-4.5V, VDS=-5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-6.4A

Ω

VGS=-2.5V, ID=-4.5A

Forward Transconductance

VDS=-5V, ID=-5A

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=-10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge (10V)

VGS=-4.5V, VDS=-10V, ID=-4.5A

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=-4.5V, VDS=-10V, RL=2Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=-5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The value

in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to

thermal resistance from junction to drain lead.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

Rev5: Nov 2010

Ω

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4622

Page

v1.0

4622 bảng dữ liệu(PDF) 5 Page - Shenzhen Tuofeng Semiconductor Technology Co

4622 bảng dữ liệu(HTML) 5 Page - Shenzhen Tuofeng Semiconductor Technology Co

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL