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ESH1B bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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ESH1B bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() ESH1B, ESH1C, ESH1D www.vishay.com Vishay General Semiconductor Revision: 08-Apr-2020 1 Document Number: 88890 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface-Mount Ultrafast Plastic Rectifier LINKS TO ADDITIONAL RESOURCES FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF at IF 0.90 V TJ max. 175 °C Package SMA (DO-214AC) Circuit configurations Single SMA (DO-214AC) Cathode Anode 333 DDD3 D 3D Models Available Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH1B ESH1C ESH1D UNIT Device marking code EHB EHC EHD Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current at TL = 150 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC® method) IFSM 50 A Operating junction and storage temperature range TJ, TSTG -55 to +175 °C |
Số phần tương tự - ESH1B |
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Mô tả tương tự - ESH1B |
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