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NVMFSC0D9N04C bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện NVMFSC0D9N04C
Giải thích chi tiết về linh kiện  MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A
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NVMFSC0D9N04C bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
5
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
10
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = +20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.5
3.5
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
ID = 250 mA, ref to 25°C
−8.6
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
0.69
0.87
mW
CHARGES & CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
6100
pF
Output Capacitance
COSS
3400
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 32 V; ID = 50 A
86
nC
Gate−to−Source Charge
QGS
28
Gate−to−Drain Charge
QGD
14
Plateau Voltage
VGP
4.9
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 32 V,
ID = 50 A, RG = 2.5 W
54
ns
Rise Time
tr
160
Turn−Off Delay Time
td(OFF)
220
Fall Time
tf
170
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.8
1.2
V
TJ = 125°C
0.65
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
91
ns
Charge Time
ta
42
Discharge Time
tb
49
Reverse Recovery Charge
QRR
159
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.



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