BAV301 datasheet(2/5 Pages) VISHAY

2 / 5 page

BAV300, BAV301, BAV302, BAV303

www.vishay.com

Vishay Semiconductors

Rev. 2.3, 26-Nov-2021

Document Number: 85545

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Thermal resistance junction to ambient air

Mounted on epoxy-glass

hard tissue, fig. 4

35 μm copper clad, 0.9 mm2

copper area per electrode

RthJA

500

K/W

Junction temperature

175

°C

Storage temperature range

Tstg

-65 to +175

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

Reverse current

VR = 50 V

BAV300

100

VR = 100 V

BAV301

100

VR = 150 V

BAV302

100

VR = 200 V

BAV303

100

Tj = 100 °C, VR = 50 V

BAV300

μA

Tj = 100 °C, VR = 100 V

BAV301

μA

Tj = 100 °C, VR = 150 V

BAV302

μA

Tj = 100 °C, VR = 200 V

BAV303

μA

Breakdown voltage

IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms

BAV300

V(BR)

BAV301

V(BR)

120

BAV302

V(BR)

200

BAV303

V(BR)

250

Diode capacitance

VR = 0 V, f = 1 MHz

1.5

Differential forward resistance

IF = 10 mA

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100

trr

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