BLF989E_BLF989ES

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 3 — 17 February 2022

2 of 12

BLF989E; BLF989ES

UHF power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BLF989E (SOT539AN)

1

drain1 (peak)

2

drain2 (main)

3

gate1 (peak)

4

gate2 (main)

5source

[1]

BLF989ES (SOT539BN)

1

drain1 (peak)

2

drain2 (main)

3

gate1 (peak)

4

gate2 (main)

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Package name

Orderable part number

12NC

Packing description

Min. orderable

quantity (pieces)

SOT539AN

BLF989EU

9349 602 21112

Tray, 20-fold; non-dry pack

60

SOT539BN

BLF989ESU

9349 602 22112 Tray, 20-fold; non-dry pack

60

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

main amplifier drain-source voltage

-

108

V

peak amplifier drain-source voltage

-

108

V

main amplifier gate-source voltage

6+11

V

peak amplifier gate-source voltage

6+11

V

storage temperature

65

+150

C

junction temperature

[1] -225

C