BLF888A_BLF888AS#6

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© Ampleon The Netherlands B.V. 2015. All rights reserved.

Product data sheet

Rev. 6 — 1 September 2015

4 of 17

BLF888A; BLF888AS

UHF power LDMOS transistor

[1]

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

Table 7.

RF characteristics

specified.

Symbol Parameter

Conditions

Min Typ Max Unit

2-Tone, class-AB

drain-source voltage

-

50

-

V

quiescent drain current

[1] -1.3

-

A

average output power

250 -

-

W

power gain

20

21

-

dB

drain efficiency

42

46

-

%

IMD3

third-order intermodulation distortion

-

32 28

dBc

DVB-T (8k OFDM), class-AB

drain-source voltage

-

50

-

V

quiescent drain current

[1] -1.3

-

A

average output power

f = 858 MHz

110 -

-

W

power gain

f = 858 MHz

20

21

-

dB

drain efficiency

f = 858 MHz

28

31

-

%

intermodulation distortion shoulder

f = 858 MHz

[2] -

32 28

dBc

PAR

peak-to-average ratio

f = 858 MHz

[3] -8.2

-

dB

Fig 1.

Output capacitance as a function of drain-source voltage; typical values per

section

001aam579

060

40

20

200

100

300

400

(pF)

0