BLF189XRAS datasheet(8/14 Pages) AMPLEON

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BLF189XRA_BLF189XRAS

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Product data sheet

Rev. 1 — 6 November 2017

8 of 14

BLF189XRA; BLF189XRAS

Power LDMOS transistor

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20 %.

(1) IDq = 50 mA

(2) IDq = 150 mA

(3) IDq = 600 mA

(4) IDq = 2000 mA

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20 %.

(1) IDq = 50 mA

(2) IDq = 150 mA

(3) IDq = 600 mA

(4) IDq = 2000 mA

Fig 7.

Power gain as a function of output power;

typical values

Fig 8.

Drain efficiency as a function of output power;

typical values

IDq = 150 mA; f = 108 MHz; tp = 100 s;  =20 %.

(1) VDS = 50 V

(2) VDS = 45 V

(3) VDS = 40 V

(4) VDS = 35 V

(5) VDS = 30 V

(6) VDS = 25 V

IDq = 150 mA; f = 108 MHz; tp = 100 s;  =20 %.

(1) VDS = 50 V

(2) VDS = 45 V

(3) VDS = 40 V

(4) VDS = 35 V

(5) VDS = 30 V

(6) VDS = 25 V

Fig 9.

Power gain as a function of output power;

typical values

Fig 10. Drain efficiency as a function of output power;

typical values

amp00379

400

800

1200

1600

2000

PL (W)

(dB)

(4)

(3)

(2)

(1)

amp00380

400

800

1200

1600

2000

PL (W)

ηD

(%)

(4)

(3)

(1)

(2)

amp00381

400

800

1200

1600

2000

PL (W)

(dB)

(1)

(2)

(3)

(4)

(5)

(6)

amp00382

400

800

1200

1600

2000

PL (W)

ηD

(%)

(1)

(2)

(3)

(4)

(5)

(6)

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