BLS7G3135LS-200#3

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Product data sheet

Rev. 3 — 1 September 2015

4 of 10

BLS7G3135LS-200

LDMOS S-band radar power transistor

7.3 Test circuit information

[1]

American Technical Ceramics type 600F or capacitor of same quality.

[2]

TDK or capacitor of same quality.

[3]

Murata or capacitor of same quality.

[4]

Vishay Dale or resistor of same quality.

Fig 1.

Definition of transistor impedance

001aaf059

drain

gate

Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm. See Table 9 for list of components.

Fig 2.

Component layout

C11

60 mm

C3

C4

R1

C2

C1

C6

C11

C8

C5

C7

C9

C10

40 mm

40 mm

aaa-008968

Table 9.

List of components

See Figure 2 for component layout.

Component

Description

Value

Remarks

C1, C4, C4, C10

multilayer ceramic chip capacitor

15 pF

[1]

ATC600F

C2, C5

multilayer ceramic chip capacitor

10 pF

[1]

ATC600F

C3, C9

multilayer ceramic chip capacitor

0.1

F

[2]

TDK

C7

multilayer ceramic chip capacitor

1

F

[3]

Murata

C8

multilayer ceramic chip capacitor

10

F

[3]

Murata

C11

electrolytic capacitor

2200

F, 63 V

R1

chip resistor

9.1



[4]

SMD 0805