DF15005S, DF1501S, DF1502S, DF1504S, DF1506S, DF1508S, DF1510S

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Vishay General Semiconductor

Revision: 09-Jul-2020

3

Document Number: 88570

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance

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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

0.1

1

10

100

t - Heating Time (s)

Mounting Pad La yout

0.255 (6.5)

0.245 (6.2)

0.013 (0.330)

0.009 (0.241)

0.060 (1.524)

0.040 (1.016)

0.404 (10.3)

0.013 (0.330)

0.003 (0.076)

0.047 (1.20)

0.040 (1.02)

0.205 (5.2)

0.195 (5.0)

0.335 (8.51)

0.320 (8.13)

0.130 (3.3)

0.120 (3.05)

45°

0.386 (9.80)

Case Style DFS

0.404 MAX.

(10.26 MAX.)

0.205 (5.2)

0.195 (5.0)

0.047 MIN.

(1.20 MIN.)

0.060 MIN.

(1.52 MIN.)