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SI7946DP bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

tên linh kiện SI7946DP
Giải thích chi tiết về linh kiện  Dual N-Channel 150-V (D-S) MOSFET
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Document Number: 72282
S09-0227-Rev. C, 09-Feb-09
Vishay Siliconix
Si7946DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
24.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 150 V, VGS = 0 V
1
µA
VDS = 150 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.3 A
0.124
0.150
Ω
VGS = 6 V, ID = 3.1 A
0.137
0.168
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.3 A
9S
Diode Forward Voltagea
VSD
IS = 2.9 A, VGS = 0 V
0.87
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 75 V, VGS = 10 V, ID = 3.3 A
12.6
20
nC
Gate-Source Charge
Qgs
2.8
Gate-Drain Charge
Qgd
4.5
Gate Resistance
Rg
f = 1 MHz
3.5
Ω
Turn-On Delay Time
td(on)
VDD = 75 V, RL = 75 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
11
20
ns
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
30
45
Fall Time
tf
20
30
Source-Drain Reverse Recovery
Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
62
100
Output Characteristics
0
2
4
6
8
10
012345
VGS = 10 V thru 6 V
5 V
VDS - Drain-to-Source Voltage (V)
4 V
Transfer Characteristics
0
2
4
6
8
10
0123456
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)



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