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VP0106 bảng dữ liệu(PDF) 1 Page - Microchip Technology |
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VP0106 bảng dữ liệu(HTML) 1 Page - Microchip Technology |
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1 / 14 page ![]() 2022 Microchip Technology Inc. and its subsidiaries DS20006658A-page 1 VP0106 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type See Table 3-1 for pin information. GATE SOURCE DRAIN 3-lead TO-92 (Top view) P-Channel Enhancement-Mode Vertical DMOS FET |
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Mô tả tương tự - VP0106 |
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