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LM5106MM bảng dữ liệu(PDF) 8 Page - National Semiconductor (TI) |
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LM5106MM bảng dữ liệu(HTML) 8 Page - National Semiconductor (TI) |
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8 / 12 page ![]() Timing Diagrams Operational Notes The LM5106 is a single PWM input Gate Driver with Enable that offers a programmable dead-time. The dead-time is set with a resistor at the RDT pin and can be adjusted from 100ns to 600ns. The wide dead-time programming range provides the flexibility to optimize drive signal timing for a wide range of MOSFETS and applications. The RDT pin is biased at 3V and current limited to 1 mA maximum programming current. The time delay generator will accommodate resistor values from 5k to 100k with a dead-time time that is proportional to the RDT resistance. Grounding the RDT pin programs the LM5106 to drive both outputs with minimum dead-time. STARTUP AND UVLO Both top and bottom drivers include under-voltage lockout (UVLO) protection circuitry which monitors the supply volt- age (V DD) and bootstrap capacitor voltage (HB – HS) inde- pendently. The UVLO circuit inhibits each driver until suffi- cient supply voltage is available to turn-on the external MOSFETs, and the UVLO hysteresis prevents chattering during supply voltage transitions. When the supply voltage is applied to the V DD pin of the LM5106, the top and bottom gates are held low until V DD exceeds the UVLO threshold, typically about 6.9V. Any UVLO condition on the bootstrap capacitor will disable only the high side output (HO). LAYOUT CONSIDERATIONS The optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout. The following points are emphasized: 20175903 FIGURE 2. LM5106 Input - Output Waveforms 20175904 FIGURE 3. LM5106 Switching Time Definitions: t LPLH,tLPHL,tHPLH,tHPHL 20175930 FIGURE 4. LM5106 Enable: t sd 20175931 FIGURE 5. LM5106 Dead-time: DT www.national.com 8 |
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